Doping and interface effects on the ferroelectric properties of epitaxial HfO2-based thin films
Tingfeng Song, from the Multifunctional Thin Films and Complex Structures (MULFOX) Group at ICMAB-CSIC
Date: Monday, 19 September 2022
Time: 11:30 am
Venue: Sala d'Actes Carles Miravitlles, ICMAB-CSIC. Register here to attend by Zoom.
Abstract:
Ferroelectric HfO2-based thin films have aroused great interest in the research field of memory devices, because it is a complementary metal oxide semiconductor compatible material with excellent scalability. However, it is needed to further clarify the nature of ferroelectricity and enhance the ferroelectric properties. Epitaxial thin films, with more controlled microstructure than polycrystalline films, can help to achieve this objective. This thesis is focused on epitaxial HfO2-based thin films, investigating new deposition conditions, the use of different substrates and doping elements and their impact on basic functional properties. Switching and fatigue mechanisms in epitaxial HfO2-based thin films are also investigated.
Supervisors:
- Florencio Sánchez Barrera, MULFOX group, ICMAB-CSIC
- Ignasi Fina, MULFOX group, ICMAB-CSIC
PhD Comittee:
- President: José Francisco Rivadulla Fernández, Universidad Santiago de Compostela (USC), Spain
- Secretary: Eric Langenberg Pérez, Universitat de Barcelona (UB), Spain
- Vocal: Uwe Schroeder, Namlab, Germany
University: Universitat Autònoma de Barcelona (UAB)
PhD Programme: Materials Science PhD Programme
Pole figure of 111 oriented hafnia thin film and related ferroelectric loop