Florencio

Sánchez Barrera

Contact data:

Extension: 436127

Direct phone: 932557327

Email: This email address is being protected from spambots. You need JavaScript enabled to view it.

Department: Magnetic Materials and Functional Oxides

Research interest

My research activities pivote around the development of functional oxides thin films, mainly ferroelectric HfO₂, and their integration into epitaxial complex heterostructures, with particular interest in the integration with silicon.

University Degrees:

Degree in Physics from University of Barcelona

Doctorates:

PhD in Physics from University of Barcelona

Specialities:

Epitaxy of oxides

Ferroelectric HfO₂

Integration of ferroelectrics with Si(001)

Scientific Highlights:

· J. Lyu, T. Song, I. Fina, and F. Sánchez, High polarization, endurance and retention in sub-5 nm Hf_0.5Zr_0.5O₂ films, Nanoscale 12, 11280 (2020)

· S. Estandía, N. Dix, M.F. Chisholm, I. Fina, and F. Sánchez, Domain matching epitaxy of ferroelectric Hf_0.5Zr_0.5O₂(111) on La_2/3Sr_1/3MnO₃(001), Crystal Growth & Design 20, 3801 (2020)

· J. Lyu, I. Fina, J. Fontcuberta, and F. Sánchez, Epitaxial Integration on Si(001) of Ferroelectric Hf_0.5Zr_0.5O₂ Capacitors with High Retention and Endurance, ACS Applied Materials & Interfaces 11, 6224 (2019)

· J. Lyu, I. Fina, R. Solanas, J. Fontcuberta, and F. Sánchez, Growth Window of Ferroelectric Epitaxial Hf_0.5Zr_0.5O₂ Thin Films, ACS Applied Electronic Materials 1, 220 (2019)

· S. Estandía, N. Dix, J. Gazquez, I. Fina, J. Lyu, M. F. Chisholm, J. Fontcuberta, and F. Sánchez, Engineering ferroelectric Hf_0.5Zr_0.5O₂ thin films by epitaxial stress, ACS Applied Electronic Materials 1, 1449 (2019),

· J. Lyu, I. Fina, R. Solanas, J. Fontcuberta, and F. Sánchez, Robust ferroelectricity in epitaxial Hf_1/2Zr_1/2O₂ thin films, Applied Physics Letters 113, 082902 (2018)

· J. Lyu, S. Estandía, J. Gazquez, M. F. Chisholm, I. Fina, N. Dix, J. Fontcuberta, and F. Sánchez, Control of polar orientation and lattice strain in epitaxial BaTiO₃ films on silicon, ACS Applied Materials & Interfaces 10, 25529 (2018)