Ferrimagnetic Mn₄N has recently emerged as a promising rare-earth-free platform for spintronic devices, owing to its low magnetization, high domain wall mobility, and strong anomalous Hall response. However, achieving thin films with robust perpendicular magnetic anisotropy (PMA) and spin-orbit torque (SOT) functionality via scalable deposition methods remains a key challenge. Here, we systematically investigate the growth of Mn₄N thin films by reactive magnetron sputtering and establish the conditions required to obtain high-quality films with properties suitable for SOT applications. We show that epitaxial, single-crystalline Mn₄N with strong PMA can be achieved on MgO(100), while films grown on SrTiO₃ (100) remain textured. The optimized films exhibit square-like hysteresis loops with high remanence, large and tunable coercivity, and a large anomalous Hall effect signal. By combining structural, magnetic, and magnetotransport measurements with density functional theory calculations, we identify epitaxial strain as an important tuning parameter for magnetic anisotropy, while also demonstrating that it is not the sole contributor. In particular, our results highlight the additional role of interfacial effects in stabilizing PMA. Finally, we demonstrate efficient current-induced magnetization switching in Mn₄N/Pt bilayers, confirming efficient interfacial spin transparency. These results establish sputtered Mn₄N as a viable and versatile material platform for energy-efficient spin-orbitronic devices.