Resistive switching in nanometric BaTiO3 ferroelectric junctions
Date: Friday, 16 November 2018
Time: 10 am
Venue: Sala d'Actes Carles Miravitlles, ICMAB
Abstract: Ferroelectric capacitors consisting in two metallic electrodes separated by a ferroelectric layer have great potential for memory and logic devices. Naturally, the success of this approach relies on the ability to build ferroelectric capacitor displaying large resistance changes (resistive switching, RS) at room temperature.
The goal of the present thesis is the study of the RS behavior of ferroelectric thin (10-100 nm) and ultrathin (<10 nm) films. In particular, we study the different RS response depending on parameters such as ferroelectric layer thickness, writing voltage, amplitude and polarity, writing time, device temperature and contact configuration. We argue that the presence of imprint electric fields causes the device asymmetry. We discovered that the magnitude and sign of RS depend on the barrier thickness and writing protocol. We experimentally demonstrated that using a simple anti-serial connection of ferroelectric tunnel junctions has significant advantages in power saving.
- Josep Fontcuberta, Laboratory of Multifunctional Oxides and Complex Structures (MULFOX), ICMAB
- Ignasi Fina, Laboratory of Multifunctional Oxides and Complex Structures (MULFOX), ICMAB
- President: Francesca Campabadal, IMB-CNM-CSIC, Spain
- Secretary: Catherine Dubourdieu, Freie Universität Berlin/Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Germany
- Vocal: Stefano Brivio, Consiglio Nazionale delle Ricerche (CNR, National Research Council) – Institute for Microelectronics and Microsystems (IMM) in the Unit of Agrate Brianza, Italy