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Enhanced electroresistance endurance of capped Hf0.5Zr0.5O2 ultrathin epitaxial tunnel barriers
10 May 2022
Electroresistance in ultrathin Hf0.5Zr0.5O2 (HZO) films is pivotal toward the implementation of hafnia-based ferroelectrics in electronics. Here, we show that the electroresistance yield and endurance of large capacitors (∼314 µm2) of epitaxial HZO films only 2.2 nm thick grown on SrTiO3 or GdScO3 can be improved using 1 nm SrTiO3 capping layers. It is argued that the main role of the capping layer is to minimize charge transport along grain boundaries, and, thus, a similar strategy can be explored in polycrystalline films
Electroresistance in ultrathin Hf0.5Zr0.5O2 (HZO) films is pivotal toward the implementation of hafnia-based ferroelectrics in electronics. Here, we show that the electroresistance yield and endurance of large capacitors (∼314 µm2) of epitaxial HZO films only 2.2 nm thick grown on SrTiO3 or GdScO3 can be improved using 1 nm SrTiO3 capping layers. It is argued that the main role of the capping layer is to minimize charge transport along grain boundaries, and, thus, a similar strategy can be explored in polycrystalline films
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Oxides for new-generation electronics

Enhanced electroresistance endurance of capped Hf0.5Zr0.5O2 ultrathin epitaxial tunnel barriers


Xiao Long, Huan Tan, Saúl Estandía, Jaume Gazquez, Florencio Sánchez, Ignasi Fina and Josep Fontcuberta

APL Materials 10, 031114 (2022)
DOI: https://doi.org/10.1063/5.0076865


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