Manuel Souto, Li Yuan, Dayana C. Morales, Li Jiang, Imma Ratera, Christian A. Nijhuis, and Jaume Veciana. J. Am. Chem. Soc. 2017, 139, 4262−4265. DOI:10.1021/jacs.6b12601
This Communication describes the mechanism of charge transport across self-assembled monolayers (SAMs) of two donor−acceptor systems consisting of a polychlorotriphenylmethyl (PTM) electron-acceptor moiety linked to an electron-donor ferrocene (Fc) unit supported by ultraflat template-stripped Au and contacted by a eutectic alloy of gallium and indium top contacts. The electronic and supramolecular structures of these SAMs were well characterized. The PTM unit can be switched between the nonradical and radical forms, which influences the rectification behavior of the junction. Junctions with nonradical units rectify currents via the highest occupied molecular orbital (HOMO) with a rectification ratio R = 99, but junctions with radical units have a new accessible state, a single-unoccupied molecular orbital (SUMO), which turns rectification off and drops R to 6..
Oxides for new-generation electronics
Tuning the Rectification Ratio by Changing the Electronic Nature (Open-Shell and Closed-Shell) in Donor−Acceptor Self-Assembled Monolayers
Systematic studies on polycrystalline Hf1–xZrxO2 films with varying Zr contents show that HfO2 films are paraelectric (monoclinic). If the Zr content is increased, films become ferroelectric (orthorhombic) and then antiferroelectric (tetragonal). HfO2 shows very good insulating properties and it is used in metal-oxide-semiconductor field-effect devices, while ZrO2 shows good piezoelectric properties, but it is antiferroelectric. In between, Hf0.5Zr0.5O2 shows good ferroelectric properties at the expense of poorer insulating and piezoelectric properties than HfO2 and ZrO2, respectively.
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest in this material and ferroelectric oxides are once again in the spotlight of the memories industry. Great efforts are being made to understand and control ferroelectric properties. Epitaxial films, which have fewer defects and a more controlled microstructure than polycrystalline films, can be very useful for this purpose. Epitaxial films of ferroelectric HfO2 have been much less investigated, but after the first report in 2015 significant progress has been achieved.
We report here a structural study of RBaMn2O6 (R=La, Pr, and Nd) compounds by means of synchrotron radiation x-ray powder diffraction and Raman spectroscopy. The three compounds are A-site ordered perovskites adopting the prototypical tetragonal structure at high temperature. A ferromagnetic transition is observed in the LaBaMn2O6 sample and the lattice parameters undergo anisotropic changes at TC related to the orientation of the magnetic moments.
The layered perovskite YBaCuFeO5 (YBCFO) is considered one of the best candidates to high-temperature chiral multiferroics with strong magnetoelectric coupling. In RBaCuFeO5 perovskites (R: rare-earth or Y) A-site cations are fully ordered whereas their magnetic properties strongly depend on the preparation process. They exhibit partial cationic disorder at the B-site that generates a magnetic spiral stabilized through directionally assisted long range coupling between canted locally frustrated spins.
We report the synthesis and theoretical study of two new colorimetric chemosensors with special selectivity and sensitivity to Ni2+ and Cu2+ ions over other metal cations in the CH3CN/H2O solution. Compounds (E)-4-((2-nitrophenyl)diazenyl)-N,N-bis(pyridin-2-ylmethyl)aniline (A) and (E)-4-((3-nitrophenyl)diazenyl)-N,N-bis(pyridin-2-ylmethyl)aniline (B) exhibited a drastic color change from yellow to colorless, which allows the detection of the mentioned metal cations through different techniques.