SCIENTIFIC HIGHLIGHTS

Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2
15 December 2020
Herein, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf0.5Zr0.5O2 thin films on silicon. Wake-up, endurance, and fatigue of these films are found to be intricately correlated, strongly hysteretic, and dependent on available thermal energy.
Field-dependent measurements reveal a decrease in polarization with temperature, which has been determined not to be an intrinsic change of the material property, rather a demonstration of the increase in the coercive bias of the material. Our findings suggest that a deficiency in thermal energy suppresses the mobility of defects presumed to be oxygen vacancies during wake-up and trapped injected charge during fatigue, which is responsible for polarization evolution during cycling. This permits accelerated wake-up and fatigue effects at high temperatures where thermal energy is abundant but delays these effects at cryogenic temperatures.

The work at Argonne (J. W. Adkins and S. R. Bakaul were responsible for electronic transport experiments, data analysis, and contribution to manuscript writing) was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The use of the Center for Nanoscale Materials was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. J. T. Abiade acknowledges financial support from the U. S. National Science Foundation under Grant No. NSF-DMR-1508220. Financial support from the Spanish Ministerio de Ciencia e Innovación, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (No. SEV-2015-0496) and the Nos. MAT2017-85232-R (AEI/FEDER, EU), and MAT2015-73839-JIN projects, and from Generalitat de Catalunya (No. 2017 SGR 1377) is acknowledged. J. W. Adkins acknowledges the University of Illinois at Chicago's Pipeline to an Inclusive Faculty (PIF) Program. I. Fina acknowledges Ramón y Cajal Contract No. RYC-2017-22531.

Hits: 599
Oxides for new-generation electronics

Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2


J. W. Adkins, I. Fina, F. Sánchez, S. R. Bakaul, and J. T. Abiade

Appl. Phys. Lett. 117, 142902 (2020)
DOI: https://doi.org/10.1063/5.0015547

Also at ICMAB

  • New Sensitive and Selective Chemical Sensors for Ni2+ and Cu2+ Ions: Insights into the Sensing Mechanism through DFT Methods

    Information
    09 April 2021 174 hit(s) Oxides
    We report the synthesis and theoretical study of two new colorimetric chemosensors with special selectivity and sensitivity to Ni2+ and Cu2+ ions over other metal cations in the CH3CN/H2O solution. Compounds (E)-4-((2-nitrophenyl)diazenyl)-N,N-bis(pyridin-2-ylmethyl)aniline (A) and (E)-4-((3-nitrophenyl)diazenyl)-N,N-bis(pyridin-2-ylmethyl)aniline (B) exhibited a drastic color change from yellow to colorless, which allows the detection of the mentioned metal cations through different techniques.
  • Silicon nanowires as acetone-adsorptive media for diabetes diagnosis

    Information
    06 April 2021 255 hit(s) Oxides
    Early detection of diabetes, a worldwide health issue, is key for its successful treatment. Acetone is a marker of diabetes, and efficient, non-invasive detection can be achieved with the use of nanotechnology. In this paper we investigate the effect of acetone adsorption on the electronic properties of silicon nanowires (SiNWs) by means of density functional theory.
  • Soft‐Chemistry‐Assisted On‐Chip Integration of Nanostructured α‐Quartz Microelectromechanical System

    Information
    30 March 2021 217 hit(s) Oxides
    The development of advanced piezoelectric α‐quartz microelectromechanical system (MEMS) for sensing and precise frequency control applications requires the nanostructuration and on‐chip integration of this material on silicon material.
  • Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films

    Information
    26 March 2021 255 hit(s) Oxides
    Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite electrodes are compared.
  • Metallic Diluted Dimerization in VO2 Tweeds

    Information
    19 March 2021 245 hit(s) Oxides
    Though first order transitions are thought to be abrupt, materials find cunning ways to smooth the jump. Here we show that VO2 chooses making beautiful tapestries at the atomic scale. To see how, and how they affect its intriguing metal-insulator transition, continue reading:

INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA, Copyright © 2020 ICMAB-CSIC | Privacy Policy | This email address is being protected from spambots. You need JavaScript enabled to view it.