The Laboratory of MBE (L-MBE) is a scientific service developing own research and supporting research of other groups based on group IV semiconductor heterostructures. The L-MBE belongs to the Scientific Service Unit and is also part of the Laboratory of Optical Properties. The service is scientifically coordinated by Dr. M. Isabel Alonso and governed by a commission detailed below. The service is managed according to the regulations established by the commission.
Dr. M. Isabel Alonso
Prof. Joan Bausells (IMB-CNM-CSIC)
Dr. Javier Rodriguez-Viejo (UAB)
Dr. Jordi Fraxedas (CIN2-CSIC)
Prof. Teresa Puig (ICMAB-CSIC)
Dr. Miquel Garriga (ICMAB-CSIC)
Ultra-high vacuum system (Omicron) composed of Fast-entry-lock chamber and main chamber for MBE deposition on 10cm wafers.
Electron-beam evaporator for Si
High temperature effusion cell for Ge
Carbon sublimation source with a pyrolytic graphite filament
High temperature effusion cell for B
Low temperature effusion cell for Sb
GaP decomposition cell for P2.
Cross beam mass analyser for Si flux control or RGA.