The research into insulating ferrimagnetic garnets has gained enormous momentum in the past decade. This is partly due to the improvement in the techniques to grow high-quality ultrathin films with desirable properties and the advances in understanding the spin transport within the ferrimagnetic garnets and through their interfaces with conducting materials. In recent years, we have seen remarkable progress in controlling the magnetization state of ferrimagnetic garnets by electrical means in suitable heterostructures and device architectures.