Electroresistance is the functional property of resistive switching devices exploited in data storage and computing.
Here we show that capping a ferroelectric Hf0.5Zr0.5O2 (HZO) nanometric layer by ultrathin amorphous or crystalline dielectric layer, widens voltage‐operation regime, reduces device‐to‐device electroresistance variability, and enhances performance. Grain boundaries in the films and field‐induced conducting channels across are blocked by the capping layer.
Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta.
Adv. Funct. Mater.2020, 2002638.
DOI: 10.1002/adfm.202002638
Oxides for new-generation electronics
Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
